33. Determination of the Poisson ratio of In₂O₃ by synchrotron based X­ray diffraction on strained thin films grown

     by molecular beam epitaxy

     K. H. L. Zhang, A. Regoutz, R. G. Palgrave, D. J. Payne, R. G. Egdell, S. P. Collins, D. Wermeille, A. Walsh, R. A. Cowley

     Physical Review B, 84, 233301 (2011)

32. Observation of a surface alloying­to­dealloying transition during growth of Bi on Ag (111)

     K. H. L. Zhang, I. M. McLeod, Y. H. Lu, V. R. Dhanak, A. Matilainen, M. Lahti, K. Pussi, R. G. Egdell, X. Wang,

     A.T. S. Wee, W. Chen

     Physical Review B, 83, 235418 (2011)

31. Polar oxide films growth: the case of MgO (111)

     V. K. Lazarov, Z. Cai, K. Yoshida, K. H. L. Zhang, M. Weinert, K. S. Ziemer,  P. J. Hasnip

     Physical Review Letters, 107, 056101 (2011)

30. Influence of temperature on epitaxial growth and properties of In₂O₃ Thin films on YSZ (111)

     K. H. L. Zhang, V. K. Lazarov, T. D. Veal, C. F. McConville, H. H. C. Lai, R.G. Egdell,

     Journal of Crystal Growth, 318, 345 (2011)

29. LEED I-­V and DFT structure determination of the (3x3) R30° Pb­Ag (111) surface alloy

     I. M. McLeod, V. R. Dhanak, A. Matilainen, M. Lahti, K. Pussi, K. H. L. Zhang

     Journal of Physics Condensed Matter, 23, 265006 (2011)

28. Band gap control of metal oxides through epitaxial strain: the case of indium oxide

     A. Walsh, C. R. Catlow, K. H. L. Zhang, R.G. Egdell

    Physical Review B, 83, 161202 (2011)

27. Thickness dependence of the properties of epitaxial In₂O₃ thin films grown on Y­ ZrO₂(111)

     K. H. L. Zhang, V. K. Lazarov, T. D. Veal, F. E. Oropeza, C. McConville, R.G. Egdell, Aron Walsh, R. A. Catlow

     Journal of Physics Condensed Matter, 23, 334211 (2011)