114. Optimizing the Electronic Structure of In2O3 through Mg Doping for NiO/In2O3 p–n Heterojunction Diodes
Y. Gong, Z. Yang, L. Lari, I. Azaceta, V. K. Lazarov, J. Zhang, X. Xu, Q-Cheng, and Kelvin H. L. Zhang
ACS Appl. Mater. Interfaces, 12, 53446 (2020).
113. Defects in Complex Oxide Thin Films for Electronics and Energy Applications: Challenges and Opportunities
Weiwei Li, Jueli Shi, Kelvin H. L. Zhang, Judith L. MacManus-Driscoll
Materials Horizons, 10.1039/D0MH00899K, (2020). (Invited Review)
112. Atomic-Scale Control of Electronic Structure and Ferromagnetic Insulating State in Perovskite Oxide Superlattices by Long
Range Tuning of BO6 Octahedra
W. Li, B. N. Zhu, R. X. Zhu, Q. Wang, P. Lu, Y.W. Sun, C. Cafolla, Z. M. Qi, A.P. Chen, P. Gao, H. Y. Wang, Q. He, K. H. L. Zhang,
J. L. MacManus-Driscoll
Advanced Functional Materials (https://doi.org/10.1002/adfm.202001984)
111. Electronic structure, optical properties and photoelectrochemical activity of Sn doped Fe2O3 thin films
C. M. Tian, W. W. Li, Y. M. Lin, Z. Z. Yang, L. Wang, Y. Du, H. Y. Xiao, L. Qiao, J.-Y. Zhang, L. Chen, D.-C. Qi, J. L. MacManus-Driscoll, and K. H. L. Zhang
J. Phys. Chem. C (10.1021/acs.jpcc.0c02875)
110. Hot-carrier transfer at photocatalytic silicon/platinum interfaces
C. Zhang, Y. Fan, X. C. Huang, K. H. L. Zhang, M. C. Beard, and Y. Yang
J. Chem. Phys., 152, 144705 (2020).
109.Quantized Auger Recombination of Polaronic Self-trapped Excitons in Bulk Iron Oxide
H. Liao, Y. Fan, Y. Lin, K. Wang, R. Li, X. Chen, K. H. L. Zhang, and Y. Yang
arXiv preprint arXiv:2002.02389 (2020).
108. Recent progress on the electronic structure, defect, and doping properties of Ga2O3 (review)
J. Y. Zhang, J. L. Shi, D.-C. Qi, L. Chen, and K. H. L. Zhang
APL Materials 8, 020906 (2020).
107. Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches
M. Wu, S. Q. Chen, C.W. Huang, X. Ye, H. P. Zhou, X. C. Huang, K. H. L. Zhang, W. S. Yan, H. L. Zhang, K. Kim, Y. Du, S. Chambers,
J.-C. Zheng, H.-Q. Wang
Frontiers of Physics,15, 13601 (2020).
106. Fabrication and Interfacial Electronic Structure of Wide Bandgap NiO and Ga2O3 p–n Heterojunction
J.Y. Zhang, S. Han, M. Cui, X. Xu, W. Li, H. Xu, C. Jin, M. Gu, L. Chen, K. H. L. Zhang
ACS Appl. Electron. Mater., 2, 456 (2020).
105. Increased activity in the oxygen evolution reaction by Fe4+-induced hole states in perovskite La1-xSrxFeO3
Z. C. Shen, Y. B. Zhuang, W. W. Li, X. C. Huang, F. E. Oropeza, E. J. M. Hensen, J. P. Hofmann, M. Y. Cui, A. Tadich, D. C. Qi, J. Cheng,
J. Li, and K. H. L. Zhang
J. Mater. Chem. A 8, 4407 (2020).
104. Binary Pd/amorphous-SrRuO3 hybrid film for high stability and fast activity recovery ethanol oxidation electrocatalysis
X. Q. Wu, J. X. He, M. Zhang, Z. R. Liu, S. Zhang, Y. Zhao, T. Li, F.P. Zhang, Z. Peng, N. Y. Cheng, J.Y. Zhang, X. J. Wen, Y. W. Xie,
H. Tian, L. Cao, L, Bi, Y. Du, H. L. Zhang, J. Chen, X.G. An, Y. M. Lei, H. H. Shen, J. T. Gan, X. T. Zu, S. Li, L. Qiao
Nano Energy 67, 104247 (2020).
103. Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films
W.W. Li, B.N. Zhu, Q. He, A. Y. Borisevich, C. Yun, R. Wu, Ping Lu, Zhimin Qi, Qiang Wang, Aiping Chen, Haiyan Wang,Stuart A. Cavill,
Kelvin H. L. Zhang, and Judith L. MacManus-Driscoll
Adv. Sci., 7, 1901606 (2020).